View HAL571_2095368.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HAL571, 573...575, hal581, 584 two-wire hall effect sensor family edition oct. 11, 2000 6251-538-1ai advance information micr onas m i c r o n a s
hal57x, hal58x advance information 2 micronas contents page section title 3 1. introduction 3 1.1. features 3 1.2. family overview 4 1.3. marking code 4 1.4. operating junction temperature range 4 1.5. hall sensor package codes 4 1.6. solderability 5 2. functional description 6 3. specifications 6 3.1. outline dimensions 6 3.2. dimensions of sensitive area 6 3.3. positions of sensitive areas 7 3.4. absolute maximum ratings 7 3.5. recommended operating conditions 8 3.6. electrical characteristics 9 3.7. magnetic characteristics overview 12 4. type descriptions 12 4.1. HAL571 13 4.2. hal573 14 4.3. hal574 15 4.4. hal575 16 4.5. hal581 17 4.6. hal584 18 5. application notes 18 5.1. application circuit 18 5.2. extended operating conditions 18 5.3. start-up behavior 19 5.4. ambient temperature 19 5.5. emc and esd 20 6. data sheet history
hal57x, hal58x advance information 3 micronas two-wire hall effect sensor family in cmos technology 1. introduction this sensor family consists of different two-wire hall switches produced in cmos technology. all sensors change the current consumption depending on the ex- ternal magnetic field and require only two wires between sensor and evaluation circuit. the sensors of this family differ in the magnetic switching behavior and switching points. the sensors include a temperature-compensated hall plate with active offset compensation, a comparator, and a current source. the comparator compares the actual magnetic flux through the hall plate (hall voltage) with the fixed reference values (switching points). according- ly, the current source is switched on (high current consumption) or off (low current consumption). the active offset compensation leads to constant mag- netic characteristics in the full supply voltage and tem- perature range. in addition, the magnetic parameters are robust against mechanical stress effects. the sensors are designed for industrial and automotive applications and operate with supply voltages from 3.75 v to 24 v in the junction temperature range from 40 c up to 140 c. all sensors are available in the smd-pack- age sot-89b and in the leaded version to-92ua. 1.1. features: current output for two-wire applications low current consumption: 5 ma ... 6.9 ma high current consumption: 12 ma ... 17 ma junction temperature range from 40 c up to 140 c. operates from 3.75 v to 24 v supply voltage operates with static magnetic fields and dynamic mag- netic fields up to 10 khz switching offset compensation at typically 145 khz overvoltage and reverse-voltage protection magnetic characteristics are robust against mechani- cal stress effects constant magnetic switching points over a wide supply voltage range the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the mag- netic characteristics ideal sensor for applications in extreme automotive and industrial environments emc corresponding to din 40839 1.2. family overview type switching behavior sensitivity see page 571 unipolar medium 12 573 unipolar low 13 574 unipolar medium 14 575 latching medium 15 581 unipolar inverted medium 16 584 unipolar inverted medium 17 unipolar switching sensors: the sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. b hys current consumption 0b on b off i ddlow b fig. 11: unipolar switching sensor i ddhigh unipolar inverted switching sensors: the sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. b hys 0b off b on b fig. 12: unipolar inverted switching sensor i ddhigh i ddlow current consumption
hal57x, hal58x advance information 4 micronas latching sensors: the sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. the current consumption does not change if the magnetic field is removed. for chang- ing the current consumption, the opposite magnetic field polarity must be applied. b hys current consumption 0b on b off i ddlow b fig. 13: latching sensor i ddhigh 1.3. marking code all hall sensors have a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. type temperature range k e HAL571 571k 571e hal573 573k 573e hal574 574k 574e hal575 575k 575e hal581 581k 581e hal584 584k 584e 1.4. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). k: t j = 40 c to +140 c e: t j = 40 c to +100 c note: due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (t a ) and junction temperature. please refer section 5.4. on page 19 for details. 1.5. hall sensor package codes type: 57x or 58x halxxxpa-t temperature range: k or e package: sf for sot-89b ua for to-92ua type: 581 package: to-92ua temperature range: t j = 40 c to +100 c example: hal581ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: aordering codes for hall sensorso. 1.6. solderability all packages: according to iec68-2-58 during soldering reflow processing and manual rework- ing, a component body temperature of 260 c should not be exceeded. components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 c and 90% relative humidity. fig. 14: pin configuration gnd 2 1 v dd 3
hal57x, hal58x advance information 5 micronas 2. functional description the hal 57x, hal 58x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. if a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased hall plate forces a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the comparator. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. if the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. in the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the hall sensor. in the high current consumption state, the current source is switched on and the current consumption is caused by the current through the hall sensor and the current source. the built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bounc- ing. magnetic offset caused by mechanical stress is com- pensated for by using the aswitching offset compensa- tion techniqueo. an internal oscillator provides a two- phase clock. in each phase, the current is forced through the hall plate in a different direction, and the hall voltage is measured. at the end of the two phases, the hall volt- ages are averaged and thereby the offset voltages are eliminated. the average value is compared with the fixed switching points. subsequently, the current con- sumption switches to the corresponding state. the amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/f osc . shunt protection devices clamp voltage peaks at the v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to 15 v. no external protection diode is needed for reverse voltages ranging from 0 v to 15 v. fig. 21: hal57x, hal 58x block diagram temperature dependent bias switch hysteresis control comparator current source v dd 1 clock hall plate gnd 2, 3 hal57x, hal58x reverse voltage & overvoltage protection t i ddlow i dd 1/f osc = 6.9 m s i ddhigh b b off f osc t t t i dd t b on fig. 22: timing diagram (example: hal 581)
hal57x, hal58x advance information 6 micronas 3. specifications 3.1. outline dimensions fig. 31: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm 4.55 1.7 min. 0.25 2.55 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-5-a3/2e y 123 4 0.2 0.15 0.3 2 ? 0.2 sensitive area top view 1.15 3.2. dimensions of sensitive area 0.25 mm x 0.12 mm 3.3. positions of sensitive areas sot-89b to-92ua x center of the package center of the package y 0.85 mm nominal 0.9 mm nominal fig. 32: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm 0.75 0.2 3.1 0.2 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 1.27 1.27 2.54 123 0.42 4.06 0.1 3.05 0.1 0.48 spgs7002-9-a/2e ? 0.4 sensitive area 1.5 note: for all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. the improvement of the to-92ua package with the re- duced tolerances will be introduced end of 2001.
hal57x, hal58x advance information 7 micronas 3.4. absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 15 1) 2) 28 2) v i ddz supply current through protection device 1 50 2) 200 3) 50 2) 200 3) ma ma t s storage temperature range 65 150 c t j junction temperature range 40 150 c 1) 18 v with a 100 w series resistor at pin 1 (16 v with a 30 w series resistor) 2) as long as t j max is not exceeded 2) with a 220 w series resistance at pin 1 corresponding to test circuit 1 (see fig. 53) 3) t<2 ms stresses beyond those listed in the aabsolute maximum ratingso may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the arecommended operating conditions/characteristicso of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 3.75 24 v t a ambient temperature for continuous operation 40 85 1) c t on supply time for pulsed mode 30 m s 1) when using the the ako type and v dd 16 v note: due to the high power dissipation at high current consumption, there is a difference between the ambient temper- ature (t a ) and junction temperature. the power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). please refer to section 5.4. on page 19 for details.
hal57x, hal58x advance information 8 micronas 3.6. electrical characteristics at t j = 40 c to +140 c , v dd = 3.75 v to 24 v, as not otherwise specified in conditions typical characteristics for t j = 25 c and v dd = 12 v symbol parameter pin no. min. typ. max. unit conditions i ddlow low current consumption over temperature range 1 5 6 6.9 ma i ddhigh high current consumption over temperature range 1 12 14.3 17 ma v ddz overvoltage protection at supply 1 28.5 32 v i dd = 25 ma, t j = 25 c, t = 20 ms f osc internal oscillator chopper frequency 90 145 khz t j = 25 c f osc internal oscillator chopper fre- quency over temperature range 75 145 khz t en(o) enable time of output after setting of v dd 1 20 30 m s 1) t r output rise time 1 0.4 1.6 m s v dd = 12 v, r s = 30 w t f output fall time 1 0.4 1.6 m s v dd = 12 v, r s = 30 w r thjsb case sot-89b thermal resistance junction to substrate backside 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 33 r thja case to-92ua thermal resistance junction to soldering point 150 200 k/w 1) b > b on + 2 mt or b < b off 2 mt for hal 57x, b > b off + 2 mt or b < b on 2 mt for hal 58x fig. 33: recommended pad size sot-89b dimensions in mm 5.0 2.0 2.0 1.0
hal57x, hal58x advance information 9 micronas 3.7. magnetic characteristics overview at t j = 40 c to +140 c, v dd = 3.75 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. hal 571 40 c 8 12 15.5 6.5 10 13.8 0.5 2 3 mt unipolar 25 c 8 12 15.5 6.5 10 13.8 0.5 2 3 mt 100 c 8 12 15.5 6.5 10 13.8 0.5 2 3 mt 140 c tbd tbd tbd tbd tbd tbd mt hal 573 40 c 40.2 45.7 51.2 38.2 43.7 49.2 0.5 2 4 mt unipolar 25 c 38 43.5 49 36 41.5 47 0.5 2 4 mt 100 c 34 40 46 32 38 44 0.5 2 4 mt 140 c tbd tbd tbd tbd tbd tbd mt hal 574 40 c 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mt unipolar 25 c 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mt 100 c 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mt 140 c tbd tbd tbd tbd tbd tbd mt hal 575 40 c 0.5 4 8 8 4 0.5 5 8 11 mt latching 25 c 0.5 4 8 8 4 0.5 5 8 11 mt 100 c 0.5 4 8 8 4 0.5 5 8 11 mt 140 c tbd tbd tbd tbd tbd tbd mt hal 581 40 c 6.5 10 13.8 8 12 15.5 0.5 2 3 mt unipolar 25 c 6.5 10 13.8 8 12 15.5 0.5 2 3 mt inverted 100 c 6.5 10 13.8 8 12 15.5 0.5 2 3 mt 140 c tbd tbd tbd tbd tbd tbd mt hal 584 40 c 5 7.2 11.5 5.5 9.2 12 0.5 2 3 mt unipolar 25 c 5 7.2 11.5 5.5 9.2 12 0.5 2 3 mt inverted 100 c 5 7.2 11.5 5.5 9.2 12 0.5 2 3 mt 140 c tbd tbd tbd tbd tbd tbd mt note: for detailed descriptions of the individual types, see pages 12 and following.
hal57x, hal58x advance information 10 micronas 20 15 10 5 0 5 10 15 20 1510 5 0 5 10 15 20 25 30 35 v ma v dd i dd t a = 40 c t a = 25 c t a = 100 c 25 hal 5xx fig. 34: typical current consumption versus supply voltage i ddlow i ddhigh t a = 170 c 0 2 4 6 8 10 12 14 16 18 20 0123456 v ma v dd i dd hal 5xx fig. 35: typical current consumption versus supply voltage i ddlow i ddhigh t a = 40 c t a = 25 c t a = 100 c t a = 170 c 0 2 4 6 8 10 12 14 16 18 20 50 0 50 100 150 200 c ma t a i dd fig. 36: typical current consumption versus ambient temperature hal 5xx i ddhigh i ddlow v dd = 4 v v dd = 12 v v dd = 24 v 0 20 40 60 80 100 120 140 160 180 200 50 0 50 100 150 200 c khz t a f osc fig. 37: typ. internal chopper frequency versus ambient temperature hal 5xx v dd = 4 v v dd = 12 v v dd = 24 v
hal57x, hal58x advance information 11 micronas 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 v khz v dd f osc fig. 38: typ. internal chopper frequency versus supply voltage hal 5xx t a = 40 c t a = 25 c t a = 100 c t a = 170 c 0 20 40 60 80 100 120 140 160 180 200 345678 v khz v dd f osc fig. 39: typ. internal chopper frequency versus supply voltage hal 5xx t a = 40 c t a = 25 c t a = 100 c t a = 170 c
HAL571 advance information 12 micronas 4. type description 4.1. hal 571 the hal 571 is a medium sensitive unipolar switching sensor (see fig. 41). the sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. it does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in this two-wire sensor family, the hal 581 is a sensor with the same magnetic characteristics but with an in- verted output characteristic. magnetic features: switching type: unipolar medium sensitivity typical b on : 12 mt at room temperature typical b off : 10 mt at room temperature typical temperature coefficient of magnetic switching points is 0 ppm/k operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 571 is designed for applications with one mag- netic polarity and weak magnetic amplitudes at the sen- sor position such as: applications with large airgap or weak magnets, solid state switches, contactless solutions to replace micro switches, position and end point detection, and rotating speed measurement. b hys current consumption 0b on b off i ddlow b fig. 41: definition of magnetic switching points for the hal 571 i ddhigh magnetic characteristics at t j = 40 c to +140 c, v dd = 3.75 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 8 12 15.5 6.5 10 13.8 0.5 2 3 11 mt 25 c 8 12 15.5 6.5 10 13.8 0.5 2 3 11 mt 100 c 8 12 15.5 6.5 10 13.8 0.5 2 3 11 mt 140 c tbd tbd tbd tbd tbd tbd tbd mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal573 advance information 13 micronas 4.2. hal 573 the hal 573 is a low sensitive unipolar switching sensor (see fig. 42). the sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. it does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: switching type: unipolar low sensitivity typical b on : 43.5 mt at room temperature typical b off : 41.5 mt at room temperature typical temperature coefficient of magnetic switching points is 1100 ppm/k operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 573 is designed for applications with one mag- netic polarity and weak magnetic amplitudes at the sen- sor position such as: applications with large airgap or weak magnets, solid state switches, contactless solutions to replace micro switches, position and end point detection, and rotating speed measurement. b hys current consumption 0b on b off i ddlow b fig. 42: definition of magnetic switching points for the hal 573 i ddhigh magnetic characteristics at t j = 40 c to +140 c, v dd = 3.75 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 40.2 45.7 51.2 38.2 43.7 49.2 0.5 2 4 44.7 mt 25 c 38 43.5 49 36 41.5 47 0.5 2 4 42.5 mt 100 c 34 40 46 32 38 44 0.5 2 4 39 mt 140 c tbd tbd tbd tbd tbd tbd tbd mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal574 advance information 14 micronas 4.3. hal 574 the hal 574 is a medium sensitive unipolar switching sensor (see fig. 43). the sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. it does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in this two-wire sensor family, the hal 584 is a sensor with the same magnetic characteristics but with an in- verted output characteristic. magnetic features: switching type: unipolar medium sensitivity typical b on : 9.2 mt at room temperature typical b off : 7.2 mt at room temperature typical temperature coefficient of magnetic switching points is 0 ppm/k operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 574 is designed for applications with one mag- netic polarity and weak magnetic amplitudes at the sen- sor position such as: applications with large airgap or weak magnets, solid state switches, contactless solutions to replace micro switches, position and end point detection, and rotating speed measurement. b hys current consumption 0b on b off i ddlow b fig. 43: definition of magnetic switching points for the hal 574 i ddhigh magnetic characteristics at t j = 40 c to +170 c, v dd = 3.75 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mt 25 c 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mt 100 c 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mt 140 c tbd tbd tbd tbd tbd tbd tbd mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal575 advance information 15 micronas 4.4. hal 575 the hal 575 is a medium sensitive latching switching sensor (see fig. 44). the sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. the current consumption does not change if the magnetic field is removed. for chang- ing the current consumption, the opposite magnetic field polarity must be applied. for correct functioning in the application, the sensor re- quires both magnetic polaritys on the branded side of the package. magnetic features: switching type: latching medium sensitivity typical b on : 4 mt at room temperature typical b off : 4 mt at room temperature typical temperature coefficient of magnetic switching points is 0 ppm/k operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 575 is designed for applications with both mag- netic polaritys and weak magnetic amplitudes at the sensor position such as: applications with large airgap or weak magnets, multipole magnet applications, contactless solutions to replace micro switches, rotating speed measurement. b hys current consumption 0b on b off i ddlow b fig. 44: definition of magnetic switching points for the hal 575 i ddhigh magnetic characteristics at t j = 40 c to +140 c, v dd = 3.75 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 0.5 4 8 8 4 0.5 5 8 11 0 mt 25 c 0.5 4 8 8 4 0.5 5 8 11 0 mt 100 c 0.5 4 8 8 4 0.5 5 8 11 0 mt 140 c tbd tbd tbd tbd tbd tbd tbd mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal581 advance information 16 micronas 4.5. hal 581 the hal 581 is a medium sensitive unipolar switching sensor with an inverted output (see fig. 45). the sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. it does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in this two-wire sensor family, the hal 571 is a sensor with the same magnetic characteristics but with a normal output characteristic. magnetic features: switching type: unipolar inverted medium sensitivity typical b on : 10 mt at room temperature typical b off : 12 mt at room temperature typical temperature coefficient of magnetic switching points is 0 ppm/k operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 581 is designed for applications with one mag- netic polarity and weak magnetic amplitudes at the sen- sor position where an inverted output signal is required such as: applications with large airgap or weak magnets, solid state switches, contactless solutions to replace micro switches, position and end point detection, and rotating speed measurement. b hys 0b off b on b fig. 45: definition of magnetic switching points for the hal 581 i ddhigh i ddlow current consumption magnetic characteristics at t j = 40 c to +140 c, v dd = 3.75 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 6.5 10 13.8 8 12 15.5 0.5 2 3 11 mt 25 c 6.5 10 13.8 8 12 15.5 0.5 2 3 11 mt 100 c 6.5 10 13.8 8 12 15.5 0.5 2 3 11 mt 140 c tbd tbd tbd tbd tbd tbd tbd mt the hysteresis is the difference between the switching points b hys = b off b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal584 advance information 17 micronas 4.6. hal 584 the hal 584 is a medium sensitive unipolar switching sensor with an inverted output (see fig. 46). the sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. it does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in this two-wire sensor family, the hal 574 is a sensor with the same magnetic characteristics but with a normal output characteristic. magnetic features: switching type: unipolar inverted medium sensitivity typical b on : 7.2 mt at room temperature typical b off : 9.2 mt at room temperature typical temperature coefficient of magnetic switching points is 0 ppm/k operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 584 is designed for applications with one mag- netic polarity and weak magnetic amplitudes at the sen- sor position where an inverted output signal is required such as: applications with large airgap or weak magnets, solid state switches, contactless solutions to replace micro switches, position and end point detection, and rotating speed measurement. b hys 0b off b on b fig. 46: definition of magnetic switching points for the hal 584 i ddhigh i ddlow current consumption magnetic characteristics at t j = 40 c to +140 c, v dd = 3.75 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 5 7.2 11.5 5.5 9.2 12 0.5 2 3 8.2 mt 25 c 5 7.2 11.5 5.5 9.2 12 0.5 2 3 8.2 mt 100 c 5 7.2 11.5 5.5 9.2 12 0.5 2 3 8.2 mt 140 c tbd tbd tbd tbd tbd tbd tbd mt the hysteresis is the difference between the switching points b hys = b off b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal57x, hal 58x advance information 18 micronas 5. application notes 5.1. application circuit figure 51 shows a simple application with a two-wire sensor. the current consumption can be detected by measuring the voltage over r l . for correct functioning of the sensor, the voltage between pin 1 and 2 (v dd ) must be a minimum of 3.75 v. with the maximum current consumption of 17 ma, the maximum r l can be calcu- lated as: r lmax v supmin 3.75 v 17 ma v sup r l 1v dd gnd 2 or 3 v sig fig. 51: application circuit 1 for applications with disturbances on the supply line or radiated disturbances, a series resistor r v (ranging from 10 w to 30 w) and a capacitor both placed close to the sensor are recommended (see figure 52). in this case, the maximum r l can be calculated as: r lmax v supmin 3.75 v 17 ma r v 1v dd gnd 2 or 3 fig. 52: application circuit 2 4.7 nf r v v sup r l v sig 5.2. extended operating conditions all sensors fulfill the electrical and magnetic characteris- tics when operated within the recommended operating conditions (see page 7). typically, the sensors operate with supply voltages above 3 v. however, below 3.75 v, the current consump- tion and the magnetic characteristics may be outside the specification. note: the functionality of the sensor below 3.75 v is not tested on a regular base. for special test conditions, please contact micronas. 5.3. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the electrical characteristics (see page 8). during the initialization time, the current consumption is not defined and can toggle between low and high. hal57x: after t en(o) , the current consumption will be high if the applied magnetic field b is above b on . the current con- sumption will be low if b is below b off . hal58x in case of sensors with an inverted switching behavior, the current consumption will be low if b > b off and high if b < b on . note: for magnetic fields between b off and b on , the current consumption of the hal sensor will be either low or high after applying v dd . in order to achieve a defined current consumption, the applied magnetic field must be above b on , respectively, below b off .
hal57x, hal58x advance information 19 micronas 5.4. ambient temperature due to internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tempera- ture t a ). t j = t a + d t at static conditions and continuous operation, the follow- ing equation is valid: d t = i dd * v dd * r th for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: t amax = t jmax d t for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. due to the range of i ddhigh , self-heating can be critical. the junction temperature can be reduced with pulsed supply voltage. for supply times (t on ) ranging from 30 m s to 1 ms, the following equation can be used: t i dd *v dd *r th * t on t off t on 5.5. emc and esd for applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see fig. 52). the series resistor and the capacitor should be placed as closely as pos- sible to the hal sensor. please contact micronas for detailed information and first emc and esd results. 4.7 nf v emc r v1 100 w gnd 2, 3 1 v dd r v2 30 w fig. 53: recommended emc test circuit
hal57x, hal58x advance information 20 micronas 6. data sheet history 1. advanced information: ahal 571, 573... 575, 581, 584 two-wire hall effect sensor familyo, oct. 11, 2000, 6251-538-1ai. first release of the advance information. micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany order no. 6251-538-1ai all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirma- tion form; the same applies to orders based on development samples delivered. by this publication, micronas gmbh does not assume re- sponsibility for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh.

▲Up To Search▲

Price & Availability of HAL571

	To Download HAL571 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .